1N4448 查看數據表（PDF） - General Semiconductor

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1N4448

Small Signal Diodes

General Semiconductor 

1N4448

ELECTRICAL CHARACTERISTICS

Ratings at 25 °C ambient temperature unless otherwise specified

Symbol

Min.

Typ.

Max.

Unit

Forward Voltage

at IF = 5 mA

at IF = 10 mA

VF

0.62

–

0.72

V

VF

–

–

1

V

Leakage Current

at VR = 20 V

at VR = 75 V

at VR = 20 V, Tj = 150 °C

IR

–

–

25

nA

IR

–

–

5

µA

IR

–

–

50

µA

Reverse Breakdown Voltage

tested with 100 µA Pulses

V(BR)R

100

–

–

V

Capacitance

at VF = VR = 0 V

Ctot

–

–

4

pF

Reverse Recovery Time

trr

from IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100

Ω

–

–

4

ns

Thermal Resistance Junction to Ambient Air

RthJA

–

–

3501)

K/W

Recification Efficiency at f = 100 MHz, VRF = 2 V ηv

0.45

–

–

–

1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.

Rectification Efficiency Measurement Circuit

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