1N482 查看數據表（PDF） - Microsemi Corporation
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1N482 Datasheet PDF : 1 Pages
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High Conductance
1N482B
1N4th1r5u0
Use Advantages
1N486B
DO-35 Diodes
Used as a general purpose diode in power supplies, or in clipping and steering
applications. Operation at temperatures up to 200 degrees C, no derating.
Can be used in harsh environments where hermeticity and low cost are
important. Compatible with all major automatic pick and place mounting
equipment. May be used on ceramic boards along with high temperature IR
solder reflow.
Features
Humidity proof glass
Thermally matched system
No thermal fatigue
No applications restrictions
Sigma Bond™ plated contacts
100% guaranteed solderability
Problem free assembly
Six Sigma quality
LL-35 MiniMELF types available
DO -35 G lass Package
Lead Dia.
0.018-0.022"
0.458-0.558 mm
1.0"
25.4 mm
(M in.)
Length
0.120-.200"
3.05-5.08- mm
Dia.
0.06-0.09"
1.53-2.28 mm
Absolute Maximum Ratings
Average Forward Rectified Current at T = 25 oC
Ambient
Maximum Non-Repetitive Surge (8.3 mSecs. 1/2 sine)
Junction Temperature Range
Storage Temperature Range
Max. Average Power Dissipation
Symbol
I
AV
I
FSM
T
j
TS
Pdiss
Value
0.65
2.0
-65 to +200
-55 to +200
250
Unit
Amp
Amps
oC
oC
mW
Characteristics at T = 25 oC
Peak
Inverse Voltage
(MIN.)
(PIV)
Type
Volts
1N482B
30
1N483B
60
1N484B
125
1N485B
175
1N486B
225
Maximum
Average Rectified
Current
(IO)
Amps
0.2
0.2
0.2
0.2
0.2
Maximum
Forward Voltage
Drop
(VF) @ 0.1A
Volts
1.0
1.0
1.0
1.0
1.0
Maximum Leakage
Current
(IR) @ PIV
25 oC
150 oC
µA
µA
0.025
5
0.025
5
0.025
5
0.025
5
0.025
5
Minimum
Saturation
Voltage
(@0.1 mA)
Volts
40
80
150
200
250
LL-35 Glass miniMELF package available, substitute an LL prefix instead of "1N"..
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
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