1N4933(2020) 查看數據表（PDF） - Vishay Semiconductors
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1N4933 Datasheet PDF : 4 Pages
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www.vishay.com
1N4933, 1N4934, 1N4935, 1N4936, 1N4937
Vishay General Semiconductor
Fast Switching Plastic Rectifier
DO-41 (DO-204AL)
LINKS TO ADDITIONAL RESOURCES
Related
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Marking
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V
IFSM
30 A
trr
200 ns
IR
5.0 μA
VF
TJ max.
Package
1.2 V
150 °C
DO-41 (DO-204AL)
Circuit configuration
Single
FEATURES
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
MECHANICAL DATA
Case: DO-41 (DO-204AL), molded epoxy body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
3 suffix meets JESD 201 class 1A whisker test
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA= 75 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRMS
VDC
IF(AV)
IFSM
Maximum reverse recovery current
Operating junction and storage temperature range
IRM
TJ, TSTG
1N4933
50
35
50
1N4934
100
70
100
1N4935
200
145
200
1N4936
400
280
400
1.0
30
2.0
-50 to +150
1N4937
600
420
600
UNIT
V
V
V
A
A
A
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL 1N4933 1N4934
Maximum instantaneous
forward voltage
1.0 A
VF
Maximum DC reverse current
at rated DC blocking voltage
TA= 25 °C
TA= 100 °C
IR
Maximum reverse recovery time
IF = 1.0 A, VR = 30 V,
dI/dt = 50 A/μs, Irr = 10 % IRM
trr
Typical junction capacitance
4.0 V, 1 MHz
CJ
1N4935
1.2
5.0
100
200
12
1N4936
1N4937
UNIT
V
μA
ns
pF
Revision: 01-Jul-2020
1
Document Number: 88508
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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