1N5231B 查看數據表（PDF） - Continental Device India Limited
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1N5231B Datasheet PDF : 5 Pages
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SILICON PLANAR ZENER DIODES
1N5223B to 1N5279B
2.7V to 180V
DO- 35
Glass Axial Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
Forward Voltage at IF=200mA VF <1.1 V
No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance
Device
(Note 1)
1N5270B
1N5271B
1N5272B
1N5273B
1N5274B
1N5275B
1N5276B
1N5277B
1N5278B
1N5279B
Nominal
Voltage
VZ @ IZT
V
91
100
110
120
130
140
150
160
170
180
Test
Current
IZT
mA
1.4
1.3
1.1
1.0
0.95
0.90
0.85
0.80
0.74
0.68
Max Zener
Impedance
A & B Suffix only
(Note 2)
ZZT @
IZT
Ω
ZZK @
IZK=0.25mA
Ω
400
2300
500
2600
750
3000
900
4000
1100
4500
1300
4500
1500
5000
1700
5500
1900
5500
2200
6000
Max Reverse Leakage Current
IR at VR
µA
V
0.1
69
0.1
76
0.1
84
0.1
91
0.1
99
0.1
106
0.1
114
0.1
122
0.1
129
0.1
137
Max Zener
Voltage
Temp. Coeff.
θVz(Note 3)
(A&B Suffix only)
α VZ (% /ºC)
0.099
0.099
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.11
NOTE 1: The electrical characteristics are measured after allowing the device to stabilize for
20 seconds when mounted with a 9.525 mm (3/8") minimum lead length from the case.
NOTE 2:
The zener impedance is derived from the 50 Hz AC voltage, which results when AC current
having an RMS value equal to 10% of the DC zener current (IZT or IZK) is superimposed
on IZT or IZK Zener impedance is measured at two points to insure a sharp knee on the
breakdown curve, thereby, eliminating unstable units.
NOTE 3: Temperature coefficient (θVz).
Test conditions for temperature coefficient are as follows.
a. IZT=7.5mA, Tj=25ºC
T2=125ºC(1N5223A, B thru 1N5242A, B )
b. IZT=Rated IZT, TJ=25ºC
T2=125ºC(1N5243A, B thru 1N5279A, B )
Device to be temperature stabilized with current applied prior to reading brekdown voltage
at the specified ambient Rwmerature
1N5223B_5279B Rev_2 080605E
Continental Device India Limited
Data Sheet
Page 3 of 5
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