1N5818 查看數據表（PDF） - Silan Microelectronics

零件编号

产品描述 (功能)

生产厂家

1N5818

Schottky Barrier Rectifiers

Silan Microelectronics 

MOSPEC

Schottky Barrier Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal.

These state-of-the-art geometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for low voltage, high

frequency rectification, or as free wheeling and polarity protection diodes.

＊Low Forward Voltage.

＊Low Switching noise.

＊High Current Capacity

＊Guarantee Reverse Avalanche.

＊Guard-Ring for Stress Protection.

＊Low Power Loss & High efficiency.

＊150℃ Operating Junction Temperature

＊Low Stored Charge Majority Carrier Conduction.

＊Plastic Material used Carries Underwriters Laboratory

Flammability Classification 94V-O

1N5817 Thru 1N5819

SCHOTTKY BARRIER

RECTIFIERS

1.0 AMPERES

20-40 VOLTS

DO-41

MAXIMUM RATINGS

Characteristic

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

Average Rectifier Forward Current

Non-Repetitive Peak Surge Current

(Surge applied at rate load conditions

half-wave, single phase,60Hz )

Operating and Storage Junction

Temperature Range

Symbol 1N5817 1N5818 1N5819

VRRM

VRWM

20

30

40

VR

Unit

V

VR(RMS)

14

21

28

V

IO

1.0

A

IFSM

25

A

TJ , TSTG

-65 to +150

℃

ELECTRIAL CHARACTERISTICS

Characteristic

Symbol 1N5817 1N5818 1N5819 Unit

Maximum Instantaneous Forward Voltage

(IF =1.0 Amp)

(IF =3.0 Amp)

VF

0.450

0.750

0.550

0.875

0.600

0.900

V

Maximum Instantaneous Reverse Current

(Rated DC Voltage, TC = 25℃)

IR

(Rated DC Voltage, TC = 125℃)

0.5

20

mA

Typical Junction Capacitance

(Reverse Voltage of 4 volts & f=1 MHz)

CP

90

80

pF

MILLIMETERS

DIM

MIN MAX

A

2.00 2.70

B 25.40

---

C

4.10 5.20

D

0.70 0.90

CASE---

Transfer molded

plastic

POLARITY---

Cathode indicated

polarity band

Share Link: