DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

1N5821 查看數據表(PDF) - Gaomi Xinghe Electronics Co., Ltd.

零件编号
产品描述 (功能)
生产厂家
1N5821
GXELECTRONICS
Gaomi Xinghe Electronics Co., Ltd. GXELECTRONICS
1N5821 Datasheet PDF : 2 Pages
1 2
星合电子
XINGHE ELECTRONICS
1N5820 THRU 1N5822
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 40 Volts
Forward Current - 3.0Amperes
FEATURES
Plastic package has Underwriters Laboratory Flammability Classification 94V-0
Metal silicon junction ,majority carrier conduction
Guard ring for overvoltage protection
Low power loss ,high efficiency
High current capability ,Low forward voltage drop
High surge capability
For use in low voltage ,high frequency inverters,
free wheeling ,and polarity protection applications
High temperature soldering guaranteed:260 C/10 seconds at terminals
MECHANICAL DATA
DO-201AD
0.210(5.3)
0.190(4.8)
DIA
1.0(23.4)
MIN
0.375(9.50)
0.285(7.20)
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: 0.041ounce, 1.12 grams
0.052(1.32)
0.048(1.18)
DIA
1.0(23.4)
MIN
Dimensions in inches and (millimetrers)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25 C ambient temperature unless otherwise specified ,Single phase ,half wave ,resistive or inductive
load. For capacitive load,derate by 20%.)
Symbols
1N
5820
1N
5821
1N
5822
Maximum repetitive peak reverse voltage
VRRM
20
30
40
Maximum RMS voltage
VRMS
14
21
28
Maximum DC blocking voltage
VDC
20
30
40
Maximum average forward rectified
current 0.375"(9.5mm)lead length at TL=95 C
I(AV)
3.0
Peak forward surge current 8.3ms single half
sine-wave superimposed on rated load
(JEDEC method) at TL=75 C
Maximum instantaneous forward voltage at 3.0 A(Note 1 )
Maximum instantaneous forward voltage at 9.4 A(Note 1 )
Maximum instantaneous reverse
current at rated DC blocking
voltage(Note 1)
T A=25 C
T A=100 C
Typical thermal resistance(Note 2)
Operating junction and storage temperature range
IFSM
VF
VF
IR
R JA
R JL
TJ TSTG
0.475
0.850
80.0
0.500
0.900
0.2
20.0
40.0
10.0
-65 to +150
0.525
0.950
Units
Volts
Volts
Volts
Amps
Amps
Volts
Volts
mA
C/W
C
Notes: 1.Pulse test: 300 s pulse width,1% duty cycle
2.Thermal resistance (from junction to ambient)Vertical P.C.B. mounted , 0.500"(12.7mm)lead
length with 2.5X2.5(63.5X63.5mm)copper pads
1
GAOMI XINGHE ELECTRONICSCO.,LTD.    WWW.SDDZG.COM     TEL:0536-2210359       QQ:464768017

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]