1N5908(2002) 查看數據表（PDF） - ON Semiconductor
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1N5908 Datasheet PDF : 9 Pages
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1N5908
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni–Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 53 A)
Device
(Note 4.)
1N5908
VRWM
(Note 5.)
(Volts)
5.0
IR @ VRWM
(µA)
300
Breakdown Voltage
VBR (Note 6.) (Volts)
Min Nom Max
@ IT
(mA)
6.0
–
–
1.0
VC (Volts) (Note 7.)
@ IPP = 120 A @ IPP = 60 A
8.5
8.0
@ IPP = 30 A
7.6
NOTES:
3. Square waveform, PW = 8.3 ms, Non–repetitive duty cycle.
4. 1N5908 is JEDEC registered as a unidirectional device only (no bidirectional option)
5. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
6. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltages in VBR are to be controlled.
7. Surge current waveform per Figure 4 and derate per Figure 2 of the General Data – 1500 W at the beginning of this group
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