1N60AG-TN3-R 查看數據表（PDF） - Unisonic Technologies
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1N60AG-TN3-R Datasheet PDF : 7 Pages
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1N60A
Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250μA
Drain-Source Leakage Current (TJ =25°C)
Drain-Source Leakage Current (TJ =125°C)
IDSS
VDS = 600V, VGS = 0V
Gate-Source Leakage Current
Forward
Reverse
IGSS
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Breakdown Voltage Temperature
Coefficient
△BVDSS/△TJ
ID = 250μA
referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS = VGS, ID = 250μA
VGS = 10V, ID = 0.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS=25V, VGS=0V, f=1MHz
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
tD (ON)
tR
tD (OFF)
tF
QG
QGS
QGD
VDD=300V, ID=0.5A, RG=5Ω
(Note 1,2)
VDS=480V, VGS=10V, ID=0.8A
(Note 1,2)
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
VGS=0V, ISD = 1.2A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
tRR
VGS=0V, ISD = 1.2A
Reverse Recovery Charge
QRR
di/dt = 100A/μs
Notes: 1. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
600
V
10
10
μA
100 nA
-100 nA
0.4
V/°C
2.0
4.5 V
11 15 Ω
100 pF
20 pF
3 pF
12 34 ns
11 32 ns
40 90 ns
18 46 ns
8 10 nC
1.8
nC
4.0
nC
1.6 V
1.2 A
4.8 A
136
ns
0.3
μC
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 7
QW-R502-091.K
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