1N6263 查看數據表（PDF） - Shenzhen Luguang Electronic Technology Co., Ltd
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1N6263 Datasheet PDF : 2 Pages
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Features
For general purpose applications
Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
Mechanical Data
Case:JEDEC DO--35,glass case
Polarity: Color band denotes cathode end
Weight: Approx. 0.13 gram
1N6263
Small Signal Schottky Diodes
VOLTAGE RANGE: 60 V
POWER DISSIPATION:400 mW
DO - 35(GLASS)
Dimensions in millimeters
ABSOLUTE RATINGS(LIMITING VALUES)
Peak reverse voltage
Pow er dissipation (Infinite Heat Sink)
Maximum single cycle surge 10µs square w ave
Junction tenperature
Storage temperature range
1)Valid provided that electrodes are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
(Ratings at 25 ambient temperature unless otherw ise specified)
Symbols
Reverse breakdow n voltage @ IR=10 A
Leakage current @ VR=50V
Forw ard voltage drop @ IF=1mA
IF=15mA
Junction capacitance @ VR=0V,f=1MHz
Reverse recovery time @ IF=IR=5mA,recover to 0.1 IR
Termal resistance junction to ambient air
VR
IR
VF
VF
CJ
trr
RθJA
Symbols
VRRM
Ptot
IFSM
TJ
TSTG
Value
60.0
4001)
2.0
125
c-55 ---+ 150
UNITS
V
mW
A
Min.
Typ.
Max.
UNITS
60.0
V
200.0
nA
0.41
V
1.0
V
2.2
pF
1
ns
0.3
/mW
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