1N6373(2002) 查看數據表（PDF） - ON Semiconductor

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1N6373
(Rev.:2002)

1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors

ON Semiconductor 

1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)

1N6373, ICTE-5, MPTE-5,

through

1N6389, ICTE-45, C, MPTE-45, C

1000

500

TLĂ=Ă25°C

tPĂ=Ă10Ăms

200

VBR(MIN)Ă=Ă6.0 to 11.7ĂV

19ĂV

21.2ĂV 42.4ĂV

100

50

20

10

5

1000

500

TLĂ=Ă25°C

tPĂ=Ă10Ăms

200

100

50

20

10

5

1.5KE6.8CA

through

1.5KE200CA

VBR(NOM)Ă=Ă6.8 to 13ĂV

20ĂV

24ĂV

43ĂV

75ĂV

180ĂV

120ĂV

2

1

0.3 0.5 0.7 1

2 3 5 7 10

20 30

DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)

2

1

0.3 0.5 0.7 1

2 3 5 7 10

20 30

DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)

Figure 6. Dynamic Impedance

1

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

0.1 0.2

PULSE WIDTH

10 ms

1 ms

100 ms

10 ms

0.5 1 2

5 10 20

D, DUTY CYCLE (%)

50 100

Figure 7. Typical Derating Factor for Duty Cycle

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4

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