1N6373 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
1N6373 Datasheet PDF : 8 Pages
| |||
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ TL ≤ 25°C
PPK
1500
W
Steady State Power Dissipation @ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C
PD
5.0
W
20
mW/°C
Thermal Resistance, Junction−to−Lead
RqJL
20
°C/W
Forward Surge Current (Note 2)
@ TA = 25°C
IFSM
200
A
Operating and Storage Temperature Range
TJ, Tstg
− 65 to +175
°C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above TA = 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Please see 1N6382 – 1N6389 (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) for Bidirectional Devices.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
QVBR
IF
VF
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Variation of VBR
Forward Current
Forward Voltage @ IF
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
http://onsemi.com
2
Share Link: 