1N6373 查看數據表（PDF） - ON Semiconductor

零件编号

产品描述 (功能)

生产厂家

1N6373

1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors

ON Semiconductor 

1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3) = 100 A)

JEDEC

Device†

(ON Device)

Device

Marking

VRWM

(Note 4)

(Volts)

IR @

VRWM

(mA)

Breakdown Voltage

VBR (Note 5) (Volts) @ IT

Min Nom Max (mA)

VC @ IPP (Note 6)

VC

IPP

(Volts) (A)

VC (Volts) (Note 6)

@ IPP = @ IPP =

1A

10 A

QVBR

(mV/°C)

1N6373, G

1N6373

(MPTE−5, G) MPTE−5

5.0

300 6.0

−

−

1.0

9.4

160

7.1

7.5

4.0

1N6374, G

1N6374

(MPTE−8, G) MPTE−8

8.0

25

9.4

−

−

1.0

15

100

11.3

11.5

8.0

1N6375, G

1N6375

(MPTE−10,G) MPTE−10

10

2.0 11.7 −

−

1.0 16.7

90

13.7

14.1

12

1N6376, G

1N6376

(MPTE−12, G) MPTE−12

12

2.0 14.1 −

−

1.0 21.2

70

16.1

16.5

14

1N6377, G

1N6377

(MPTE−15, G) MPTE−15

15

2.0 17.6 −

−

1.0

25

60

20.1

20.6

18

1N6379, G

1N6379

(MPTE−22, G) MPTE−22

22

2.0 25.9 −

−

1.0 37.5

40

29.8

32

26

1N6380, G

1N6380

(MPTE−36, G) MPTE−36

36

2.0 42.4 −

−

1.0 65.2

23

50.6

54.3

50

1N6381, G

1N6381

(MPTE−45, G) MPTE−45

45

2.0 52.9 −

−

1.0 78.9

19

63.3

70

60

ICTE−5, G

ICTE−5

5.0

300 6.0

−

−

1.0

9.4

160

7.1

7.5

4.0

ICTE−10, G ICTE−10

10

2.0 11.7 −

−

1.0 16.7

90

13.7

14.1

8.0

ICTE−12, G ICTE−12

12

2.0 14.1 −

−

1.0 21.2

70

16.1

16.5

12

ICTE−15, G ICTE−15

15

2.0 17.6 −

−

1.0

25

60

20.1

20.6

14

ICTE−18, G ICTE−18

18

2.0 21.2 −

−

1.0

30

50

24.2

25.2

18

ICTE−22, G ICTE−22

22

2.0 25.9 −

−

1.0 37.5

40

29.8

32

21

ICTE−36, G ICTE−36

36

2.0 42.4 −

−

1.0 65.2

23

50.6

54.3

26

3. Square waveform, PW = 8.3 ms, non−repetitive duty cycle.

4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to or

greater than the dc or continuous peak operating voltage level.

5. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.

6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.

†The “G’’ suffix indicates Pb−Free package available.

http://onsemi.com

3

Share Link: