1N6373 查看數據表（PDF） - ON Semiconductor
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1N6373 Datasheet PDF : 8 Pages
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1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1000
500
TL = 25°C
tP = 10 ms
200
VBR(MIN) = 6.0 to 11.7 V
19 V
21.2 V 42.4 V
100
50
20
10
5
1000
500
TL = 25°C
tP = 10 ms
200
100
50
20
10
5
1.5KE6.8CA
through
1.5KE200CA
VBR(NOM) = 6.8 to 13 V
20 V
24 V
43 V
75 V
180 V
120 V
2
2
1
0.3 0.5 0.7 1
2 3 5 7 10
20 30
DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
1
0.3 0.5 0.7 1
2 3 5 7 10
20 30
DVBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
Figure 6. Dynamic Impedance
1
0.7
0.5
0.3
0.2
PULSE WIDTH
0.1
10 ms
0.07
0.05
1 ms
0.03
0.02
100 ms
0.01
0.1 0.2
0.5 1 2
10 ms
5 10 20
50 100
D, DUTY CYCLE (%)
Figure 7. Typical Derating Factor for Duty Cycle
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5
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