1PS74SB23,125 查看數據表（PDF） - NXP Semiconductors.

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1PS74SB23,125

Schottky barrier diode

NXP Semiconductors. 

Philips Semiconductors

Schottky barrier diode

Product specification

1PS74SB23

FEATURES

• Ultra fast switching speed

• Low forward voltage

• Fast recovery time

• Guard ring protected

• Small plastic SMD package

• Capability of absorbing very high surge current.

APPLICATIONS

• Rectification

• Circuit protection

• Polarity protection

• Switched-mode power supplies.

DESCRIPTION

Planar Schottky barrier diode encapsulated in an SC-74

(SOT457) small plastic SMD package.

PINNING

PIN

1

2

3

4

5

6

handbook, halfpage 6

5

1

2

Top view

DESCRIPTION

anode

cathode

anode

anode

cathode

anode

4

2, 5

3

MAM421

1, 3,

4, 6

Marking code: P1.

Fig.1 Simplified outline SC-74 (SOT457) and

symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

PARAMETER

VR

continuous reverse voltage

IF

continuous forward current

IFSM

non-repetitive peak forward current

IRSM

Tstg

Tj

non-repetitive peak reverse current

storage temperature

junction temperature

CONDITIONS

tp = 8.3 ms; half sinewave;

JEDEC method; note 1

tp = 100 µs

Note

1. Pins 1, 3, 4 and 6 are connected in parallel; pins 2 and 5 are connected in parallel.

MIN.

−

−

−

MAX.

25

1

25

UNIT

V

A

A

−

0.5

A

−65 +150 °C

−

125 °C

2003 Aug 04

2

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