1PS74SB23,125 查看數據表（PDF） - NXP Semiconductors.

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1PS74SB23,125

Schottky barrier diode

NXP Semiconductors. 

Philips Semiconductors

Schottky barrier diode

Product specification

1PS74SB23

ELECTRICAL CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

VF

forward voltage

IR

reverse current

Cd

diode capacitance

Note

1. Pulse test: tp = 300 µs; δ = 0.02.

CONDITIONS

IF = 100 mA

IF = 1 A

VR = 20 V; note 1; see Fig.3

VR = 25 V; note 1; see Fig.3

f = 1 MHz; VR = 4 V; see Fig.4

TYP.

260

400

80

−

100

MAX.

300

450

500

1

−

UNIT

mV

mV

µA

mA

pF

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-a

thermal resistance from junction to ambient note 1

Note

1. Refer to SC-74 (SOT457) standard mounting conditions.

CONDITIONS

VALUE

250

UNIT

K/W

2003 Aug 04

3

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