1PS88SB48 查看數據表（PDF） - TY Semiconductor

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1PS88SB48

Schottky Barrier Diodes

TY Semiconductor 

Product specification

1PS88SB48

Features

Ultra fast switching speed

Low forward voltage

Small SMD package

Guard ring protected

Absorbs very high surge pulse

Low capacitance.

Absolute Maximum Ratings Ta = 25

Parameter

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

storage temperature

junction temperature

operating ambient temperature

thermal resistance from junction to ambient

Symbol

VR

IF

IFRM

IFSM

Tstg

Tj

Tamb

Rth j-a

Conditions

tp 1 s; ä 0.5

tp < 10 ms

SOT-363

1.3+0.1

-0.1

0.65

Unit: mm

0.3+0.1

-0.1

2.1+0.1

-0.1

0.1+0.05

-0.02

Min

Max

Unit

40

V

120

mA

120

mA

200

mA

-65

+150

150

-65

+150

416

K/W

Electrical Characteristics Ta = 25

Param eter

continuous forward voltage

Sym bol

VF

continuous reverse current

IR

diode capacitance

CT

Note

1. Pulse test: tp = 300 s; ä = 0.02.

C o n d itio n s

IF = 1 m A

IF = 10 m A

IF = 40 m A

VR = 30 V

VR = 80 V

VR=0 V,f=1 MHz

Max

380

500

1

1

10

5

U n it

mV

mV

V

A

pF

Marking

Marking

8t5

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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