IXSM35N100A 查看數據表（PDF） - IXYS CORPORATION
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IXSM35N100A Datasheet PDF : 4 Pages
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IXSH 35N100A IXSM 35N100A
Symbol
gfs
IC(on)
Cies
C
oes
Cres
Qg
Qge
Q
gc
td(on)
tri
td(off)
t
fi
Eoff
td(on)
t
ri
Eon
t
d(off)
tfi
Eoff
RthJC
RthCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC = IC90; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle d £ 2 %
VGE = 15 V, VCE = 10 V
V = 25 V, V = 0 V, f = 1 MHz
CE
GE
IC = IC90, VGE = 15 V, VCE = 0.5 VCES
Inductive load, TJ = 25°C
IC = IC90, VGE = 15 V, L = 100 mH
V
CE
=
0.8
V,
CES
R
G
=
2.7
W
Switching times may increase for
VCE (Clamp) > 0.8 • VCES, higher TJ
or increased RG
Inductive load, TJ = 125°C
IC = IC90, VGE = 15 V, L = 100 mH
VCE = 0.8 VCES, RG = 2.7 W
Remarks: Switching times
may increase for
V (Clamp) > 0.8 • V , higher T or
CE
CES
J
increased RG
20 25
S
240
A
4400
pF
325
pF
85
pF
180 260 nC
45 60 nC
120 200 nC
80
ns
150
ns
400
ns
700 950 ns
10
mJ
100
ns
200
ns
4.2
mJ
400 550 ns
1300 2000 ns
15 31 mJ
0.42 K/W
0.25
K/W
TO-247 AD (IXSH) Outline
Dim. Millimeter
Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F
5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H
- 4.5 -
0.177
J
1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L
4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
TO-204 AE (IXSM) Outline
© 2000 IXYS All rights reserved
Dim. Millimeter
Min. Max.
A 38.61 39.12
B
- 22.22
C 6.40 11.40
D 1.45 1.60
E 1.52 3.43
F 30.15 BSC
G 10.67 11.17
H 5.21 5.71
J 16.64 17.14
K 11.18 12.19
Q 3.84 4.19
R 25.16 26.66
Inches
Min. Max.
1.520 1.540
- 0.875
0.252 0.449
0.057 0.063
0.060 0.135
1.187 BSC
0.420 0.440
0.205 0.225
0.655 0.675
0.440 0.480
0.151 0.165
0.991 1.050
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-4
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