1SS106 查看數據表（PDF） - Semtech Electronics LTD.

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1SS106

SILICON SCHOTTKY BARRIER DIODE

Semtech Electronics LTD. 

1SS106

SILICON SCHOTTKY BARRIER DIODE

for various detector, high speed switching

Features

• Detection efficiency is very good.

• Small temperature coefficient.

• High reliability with glass seal.

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Reverse Voltage

Average Forward Current

Junction Temperature

Storage Temperature Range

Max. 0.5

Max. 1.9

Min. 27.5

Black

Cathode Band

Black

Part No.

Black

"ST" Brand

XXX

ST

Max. 3.9

Min. 27.5

Glass Case DO-35

Dimensions in mm

Symbol

Value

Unit

VR

10

V

IO

30

mA

TJ

125

OC

Tstg

- 55 to + 125

OC

Electrical Characteristics at Ta = 25 OC

Parameter

Symbol

Min.

Max.

Unit

Forward Current

at VF = 1 V

IF

4.5

-

mA

Reverse Current

at VR = 6 V

IR

-

70

µA

Capacitance

at VR = 1 V, f = 1 MHz

C

-

1.5

pF

Rectifier Efficiency

at Vin = 2 Vrms, f = 40 MHz, RL = 5 KΩ, CL = 20 pF

η

70

-

%

ESD Capability 1)

-

100

-

at C = 200 pF, both forward and reverse direction 1 pulse.

V

1) Failure criterion: IR ≥ 140 µA at VR = 6 V

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

Dated : 20/06/2007

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