1SS171 查看數據表（PDF） - Semtech Electronics LTD.

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1SS171

SILICON EPITAXIAL PLANAR DIODE

Semtech Electronics LTD. 

1SS171

SILICON EPITAXIAL PLANAR DIODE

for high speed switching circuits

Features

• High switching speed

• Small terminal capacitance

• Large forward current

Absolute Maximum Ratings (Ta = 25 OC)

Parameter

Repetitive Peak Reverse Voltage

Reverse Voltage

Average Forward Current

Repetitive Peak Forward Current

Non-Repetitive Peak Forward Surge Current (at t = 1 s)

Junction Temperature

Storage Temperature Range

Max. 0.5

Max. 1.9

Min. 27.5

Black

Cathode Band

Black

Part No.

Black

"ST" Brand

XXX

ST

Max. 3.9

Min. 27.5

Glass Case DO-35

Dimensions in mm

Symbol

VRRM

VR

IF(AV)

IFRM

IFSM

TJ

Tstg

Value

80

80

200

600

1

175

- 65 to + 175

Unit

V

V

mA

mA

A

OC

OC

Electrical Characteristics at Ta = 25 OC

Parameter

Forward Voltage

at IF = 200 mA

Reverse Current

at VR = 15 V

at VR = 75 V

Terminal Capacitance

at VR = 0 V, f = 1 MHz

Reverse Recovery Time

at IF = 10 mA, Irr = 0.1 IR, RL = 100 Ω

Symbol

Max.

Unit

VF

1.1

V

IR

50

nA

500

CT

4

pF

trr

20

ns

SEMTECH ELECTRONICS LTD.

(Subsidiary of Sino-Tech International Holdings Limited, a company

listed on the Hong Kong Stock Exchange, Stock Code: 724)

®

Dated : 20/06/2007

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