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1SS355_0711 查看數據表(PDF) - Galaxy Semi-Conductor
零件编号
产品描述 (功能)
生产厂家
1SS355_0711
Silicon Epitaxial Planar Diode
Galaxy Semi-Conductor
1SS355_0711 Datasheet PDF : 3 Pages
1
2
3
BL
Galaxy Electrical
Production specification
Silicon Epitaxial Planar Diode
1SS355
ELECTRICAL CHARACTERISTICS
@ Ta=2
5℃ unless otherwise specified
Parameter
Forward voltage
Reverse current
Capacitance between
terminals
Reverse Recovery Time
Symbol
V
F
I
R
C
T
Min.
Typ.
Max. Unit
1.2 V
0.1
μ
A
3
pF
Conditions
I
F
=100mA
V
R
=80V
V
R
=0.5V,f=1MHz
t
rr
4
ns I
F
=10mA,V
R
=6V,R
L
=100
Ω
TYPICAL CHARACTERISTICS
@ Ta=25
℃
unless otherwise specified
Document number: BL/SSSDB001
Rev.A
www.galaxycn.com
2
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