21DQ04(2008) 查看數據表（PDF） - Vishay Semiconductors

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21DQ04
(Rev.:2008)

Schottky Rectifier, 2 A

Vishay Semiconductors 

21DQ04

Vishay High Power Products Schottky Rectifier, 2 A

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

Maximum forward voltage drop

VFM (1)

Maximum reverse leakage current

IRM (1)

Typical junction capacitance

CT

Typical series inductance

LS

Note

(1) Pulse width < 300 µs, duty cycle < 2 %

TEST CONDITIONS

2A

TJ = 25 °C

4A

2A

TJ = 125 °C

4A

TJ = 25 °C

TJ = 125 °C

VR = Rated VR

VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

VALUES

TYP. MAX.

0.49

0.55

0.60

0.65

0.42

0.5

0.56

0.62

0.01

0.50

5.2

10

130

8.0

UNITS

V

mA

pF

nH

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction and storage

temperature range

TJ (1), TStg

Maximum thermal resistance,

junction to ambient

RthJA

DC operation

Without cooling fin

Typical thermal resistance,

junction to lead

RthJL

DC operation

See fig. 4

Approximate weight

Marking device

Case style DO-204AL (D-41)

Note

(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink

dTJ RthJA

VALUES

- 40 to 150

UNITS

°C

100

°C/W

25

0.33

g

0.012

oz.

21DQ04

www.vishay.com

2

For technical questions, contact: diodes-tech@vishay.com

Document Number: 93279

Revision: 06-Nov-08

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