24N50 查看數據表（PDF） - Unisonic Technologies
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24N50 Datasheet PDF : 6 Pages
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24N50
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous (TC=25°C)
Pulsed (Note 3)
Avalanche Current (Note 3)
Avalanche Energy
Single Pulsed (Note 4)
Repetitive (Note 5)
Peak Diode Recovery dv/dt (Note 5)
SYMBOL
VDSS
VGSS
ID
IDM
IAR
EAS
EAR
dv/dt
RATINGS
500
±30
24(Note 2)
96 (Note 2)
24
1100
29
15
UNIT
V
V
A
A
A
mJ
mJ
V/ns
Power Dissipation
Derate above 25°C
290
W
PD
2.33
W/°C
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Drain current limited by maximum junction temperature
3. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L =3.4mH, IAS = 24A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
5. ISD ≤ 24A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θJA
θJC
RATINGS
40
0.43
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT
°C/W
°C/W
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SYMBOL
TEST CONDITIONS
BVDSS
IDSS
IGSS
ID=250µA, VGS=0V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=12A
CISS
COSS
CRSS
VGS=0V, VDS=25V, f=1.0MHz
MIN TYP MAX UNIT
500
V
50 µA
+100 nA
-100 nA
2.0
4.0 V
0.15 0.24 Ω
3500 4500 pF
520 670 pF
55 70 pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-533.D
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