29C256 查看數據表（PDF） - Atmel Corporation
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29C256 Datasheet PDF : 17 Pages
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Features
• Fast Read Access Time – 70 ns
• 5-volt Only Reprogramming
• Page Program Operation
– Single Cycle Reprogram (Erase and Program)
– Internal Address and Data Latches for 64 Bytes
• Internal Program Control and Timer
• Hardware and Software Data Protection
• Fast Program Cycle Times
– Page (64 Byte) Program Time – 10 ms
– Chip Erase Time – 10 ms
• DATA Polling for End of Program Detection
• Low-power Dissipation
– 50 mA Active Current
– 300 µA CMOS Standby Current
• Typical Endurance > 10,000 Cycles
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
Description
The AT29C256 is a five-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 70 ns with power dissipation of just 275 mW. When the device is
deselected, the CMOS standby current is less than 300 µA. The device endurance is
such that any sector can typically be written to in excess of 10,000 times.
256K (32K x 8)
5-volt Only
Flash Memory
AT29C256
Pin Configurations
Pin Name
A0 - A14
CE
OE
WE
I/O0 - I/O7
NC
DC
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
PLCC and LCC Top View
TSOP Top View
Type 1
OE 22
A11 23
A9 24
A8 25
A13 26
A14 27
VCC 28
WE 1
A12 2
A7 3
A6 4
A5 5
A4 6
A3 7
21 A10
20 CE
19 I/O7
18 I/O6
17 I/O5
16 I/O4
15 I/O3
14 GND
13 I/O2
12 I/O1
11 I/O0
10 A0
9 A1
8 A2
A6 5
A5 6
A4 7
A3 8
A2 9
A1 10
A0 11
NC 12
I/O0 13
29 A8
28 A9
27 A11
26 NC
25 OE
24 A10
23 CE
22 I/O7
21 I/O6
Note: PLCC package pins 1 and 17 are
DON’T CONNECT.
Rev. 0046P–FLASH–10/04
1
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