2N2219 查看數據表（PDF） - Comset Semiconductors

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产品描述 (功能)

生产厂家

2N2219

NPN SWITCHING SILICON TRANSISTORS

Comset Semiconductors 

NPN 2N2218 – 2N2218A

2N2219 – 2N2219A

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

VCE(SAT)

VCE(SAT)

fT

hfe

td

tr

ts

tf

rb,CC

Ratings

Collector-Emitter

saturation Voltage

(*)

Collector-Emitter

saturation Voltage

(*)

Transition

frequency

Small signal

current gain

Delay time

Rise time

Storage time

Fall time

Feedback time

constant

Test Condition(s)

IC=150 mA, IB=15 mA

IC=500 mA, IB=50 mA

IC=150 mA, IB=15 mA

IC=500 mA, IB=50 mA

IC=20 mA, VCE=20 V

f= 100MHz

IC=1 mA, VCE=10 V

f= 1kHz

IC=10 mA, VCE=10 V

f= 1kHz

IC=150 mA, IB =15 mA

-VBB=0.5 V, VCC=30 V

IC=150 mA, IB =15 mA

-VBB=0.5 V, VCC=30 V

IC=150 mA, VCC=30 V

IB1 = -IB2 =15 mA

IC=150 mA, VCC=30 V

IB1 = -IB2 =15 mA

IC=20 mA, VCE=20 V

f= 31.8MHz

2N2218-2N2219

2N2218A-2N2219A

2N2218-2N2219

2N2218A-2N2219A

2N2218-2N2219

2N2218A-2N2219A

2N2218-2N2219

2N2218A-2N2219A

2N2218-2N2218A

2N2219

2N2219A

2N2218A

2N2219A

2N2218A

2N2219A

2N2218A

2N2219A

2N2218A

2N2219A

2N2218A

2N2219A

2N2218A

2N2219A

2N2218A

2N2219A

Min Typ Mx

- - 0.4

- - 0.3

- - 1.6

- -1

- - 1.3

0.6 - 1.2

- - 2.6

- -2

250 - -

300 - -

30 - 150

50 - 300

50 - 300

75 - 375

- - 10

- - 25

- - 225

- - 60

- - 150

Unit

V

V

MHz

-

ns

ns

ns

ns

ps

(*) Pulse conditions : tp < 300 µs, δ =2%

16/10/2012

COMSET SEMICONDUCTORS

3|4

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