2N2484 查看數據表（PDF） - Comset Semiconductors

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2N2484

SILICON PLANAR EPITAXIAL TRANSISTORS

Comset Semiconductors 

NPN 2N2484

SILICON PLANAR EPITAXIAL TRANSISTORS

The 2N2484 are a silicon planar epitaxial NPN transistors mounted in TO-18 metal package.

They are intended for use in high-performance, low-noise amplifier circuits from audio to high-frequency.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

VCEO

VCBO

VEBO

IC

PD

TJ

TStg

Ratings

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Total Power Dissipation

Junction Temperature

@ Tamb = 25°

@ Tcase= 25°

@ Tcase<100°

Storage Temperature range

Value

60

60

6

50

0.36

1.2

0.68

200

-65 to +200

Unit

V

V

V

mA

Watts

°C

°C

THERMAL CHARACTERISTICS

Symbol

RthJ-a

RthJ-c

Ratings

Thermal Resistance, Junction-ambient

Thermal Resistance, Junction-case

Value

486

146

Unit

°C/ W

°C/ W

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

ICBO

ICBO

IEBO

VCEO (*)

VCBO

VEBO

Ratings

Collector Cutoff Current

Collector Cutoff Current

Emitter Cutoff Current

Collector Emitter Breakdown Voltage

Collector Base Breakdown Voltage

Emitter Base Breakdown Voltage

Test Condition(s)

VCB=45 V, IE=0

VCB=45 V, IE=0, Tj=150°C

VBE=5.0 V, IC=0

IC=10 mA, IB=0

IC=10 µA, IE=0

IE=10 µA, IC=0

Min Typ Mx Unit

- - 10 nA

- - 10 µA

- - 10 nA

60 - -

V

60 - -

V

6- -

V

COMSET SEMICONDUCTORS

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