2N4403 查看數據表（PDF） - Unspecified
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2N4403 Datasheet PDF : 6 Pages
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2N4401 & 2N4403
General Purpose Switching Transistors
Absolute Maximum Ratings
Parameters
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation at Ta = 25°C
Derate above 25°C
Power Dissipation at TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance
Symbol
VCEO
VCBO
VEBO
IC
PD
Tj, Tstg
2N4401
2N4403
40
40
60
6
5
600
625
5.0
1.5
12
-55 to +150
Unit
V
mA
mW
mW/°C
W
W/°C
°C
Junction to Case
Junction to Ambient
Rth(j-c)
Rth(j-a)
83.3
200
°C/W
Electrical Characteristics (Ta = 25°C unless otherwise specified)
Parameters
Symbol
Test Condition
2N4401
2N4403
Unit
Collector Emitter Voltage
Collector Base Voltage
BVCEO*
BVCBO
IC = 1mA, IB = 0
IC = 100µA, IE = 0
>40
>40
>60
V
Emitter Base Voltage
BVEBO
IE = 100µA, IC = 0
>6
>5
Base Cut off Current
Collector Cut off Current
IBEV
ICEX
VCE = 35V, VEB = 0.4V
VCE = 35V, VEB = 0.4V
<0.1
<0.1
µA
Collector Emitter Saturation Voltage
VCE(Sat)*
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
<0.4
<0.75
<0.4
<0.75
V
Base Emitter Saturation Voltage
VBE(Sat) *
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
0.75 - 0.95 0.75 - 0.95
<1.2
<1.3
DC Current Gain
IC = 0.1mA, VCE = 1V
>20
>30
IC = 1mA, VCE = 1V
>40
>60
hFE
IC = 10mA, VCE = 1V
IC = 150mA, VCE = 1V*
>80
100 - 300
>100
-
-
IC = 150mA, VCE = 2V*
-
100 - 300
IC = 500mA, VCE = 2V*
>40
>20
Dynamic Characteristics
Small Signal Current Gain
hfe
IC = 1mA, VCE = 10V, f = 1kHz 40 - 500
60 - 500
-
Input Impedance
hie
IC = 1mA, VCE = 10V, f = 1kHz 1.0 - 15
1.5 - 15
kΩ
*Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0%
Page 2
31/05/05 V1.0
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