2N5179 查看數據表（PDF） - Boca Semiconductor
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2N5179 Datasheet PDF : 2 Pages
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NPN SILICON PLANAR TRANSISTOR
2N5179
TO-72
Boca Semiconductor Corp
BSC
Low Noise Tuned Amplifiers.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
VALUE
Collector -Base Voltage
VCBO
20
Collector -Emitter Voltage
VCEO
12
Emitter Base Voltage
VEBO
2.5
Collector Current
IC
50
Power Dissipation @ Ta=25 deg C Ptot
200
@ Tc=25 deg C
300
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
Thermal Resistance
Junction to Case
Rth (j-c)
583
Junction to Ambient
Rth (j-a)
875
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
MIN TYP
Collector Cut off Current
ICBO
VCB=15V, IE=0
-
-
Ta=150 deg C
VCB=15V, IE=0
-
-
Collector -Base Voltage
VCBO
IC=1uA, IE=0
20
-
Collector -Emitter Voltage
VCEO(sus) IC=3mA, IB=0
12
-
Emitter Base Voltage
VEBO
IE=10uA, IC=0
2.5
-
Collector Emitter Saturation Voltage VCE(Sat) IC=10mA, IB=1mA
-
-
Base Emitter Saturation Voltage
VBE(Sat) IC=10mA, IB=1mA
-
-
DC Current Gain
hFE
IC=3mA,VCE=1V
25
-
DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio
hfe
IC=2mA,VCE=6V,f=1kHz
25
-
ft
IC=5mA,VCE=6V,f=100MHz 900
-
Out-Put Capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
-
In-Put Capacitance
Cib
VEB=0.5V, IC=0, f=1MHz
-
-
Collector Base Time Constant
rbb' Cb' c IC=2mA,VCE=6V,f=31.9MHz 3.0
-
Small-Signal Power Gain
Gp
IC=5mA,VCE=12V,f=200MHz 15
-
Common Emitter Oscillator Power Po
IE= -12mA, VCB=10V, f=
20
-
Output
>500MHz
UNIT
V
V
V
mA
mW
mW
deg C
deg C/W
deg C/W
MAX
20
UNIT
nA
1.0
uA
-
V
-
V
-
V
0.40
V
1.0
V
250
300
2000
1.0
2.0
14
-
-
MHz
pF
pF
ps
dB
mW
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