2N5210 查看數據表（PDF） - Fairchild Semiconductor
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2N5210 Datasheet PDF : 7 Pages
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Typical Characteristics (continued)
NPN General Purpose Amplifier
(continued)
Input and Output Capacitance
vs Reverse Bias Voltage
5
f = 1.0 MHz
4
3
C te
2
1
C ob
0
0
4
8
12
16
20
REVERSE BIAS VOLTAGE (V)
Contours of Constant Gain
Bandwidth Product (fT )
10
7
175 MHz
5
3
150 MHz
2
125 MHz
100 MHz
75 MHz
1
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
Normalized Collector-Cutoff Current
vs Ambient Temperature
1000
100
10
1
25
50
75
100
125
150
TA - AMBIE NT TEMPERATURE ( °C)
Wideband Noise Frequency
vs Source Resistance
5
V CE = 5.0 V
4
BANDWIDTH = 15.7 kHz
3
I C = 100 µA
3
2
I C = 30 µA
1
0
1,000
I C = 10 µA
2,000
5,000 10,000 20,000
50,000 100,000
R S - SOURCE RESISTANCE (Ω )
Noise Figure vs Frequency
10
I C = 200 µA,
8
R S = 10 kΩ
I C = 100 µA,
6
R S = 10 kΩ
I C = 1.0 mA,
R S = 500 Ω
4
I C = 1.0 mA,
R S = 5.0 kΩ
2
V CE = 5.0V
0
0.0001 0.001 0.01 0.1
1
10
100
f - FREQUENCY (MHz)
Base-Emitter Saturation
Voltage vs Collector Current
1.00
0.75
TO-92
0.50
SOT-23
0.25
0.00
0
25
50
75
100
125
150
TEMPERATURE (oC)
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