OM6520SC 查看數據表（PDF） - Omnirel Corp => IRF

零件编号

产品描述 (功能)

生产厂家

OM6520SC

INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-258AA PACKAGE

Omnirel Corp => IRF 

PRELIMINARY DATA: OM6516SC

IGBT CHARACTERISTICS

Parameter - OFF

Min. Typ. Max. Units Test Conditions

V(BR)CES Collector Emitter

Breakdown Voltage

ICES Zero Gate Voltage

Drain Current

IGES Gate Emitter Leakage

Current

Parameter - ON

1000

V

0.25 mA

1.0 mA

±100 nA

VCE = 0

IC = 250 µA

VCE = Max. Rat., VGE = 0

VCE = 0.8 Max. Rat., VGE = 0

TC = 125°C

VGE = ±20 V

VCE = 0 V

VGE(th)

VCE(sat)

Gate Threshold Voltage

Collector Emitter

Saturation Voltage

VCE(sat) Collector Emitter

Saturation Voltage

Dynamic

4.5

6.5 V VCE = VGE, IC = 1 mA

3.0

V VGE = 15 V, IC = 15 A

TC = 25°C

4.0 4.5 V VGE = 15 V, IC = 15 A

TC = 125°C

gfs

Forward Transductance

Cies Input Capacitance

Coes Output Capacitance

Cres Reverse Transfer Capacitance

Switching-Resistive Load

5.5

2000

160

65

S VCE = 20 V, IC = 15 A

pF VGE = 0

pF VCE = 25 V

pF f = 1 mHz

Td(on) Turn-On Time

tr

Rise Time

Td(off) Turn-Off Delay Time

tf

Fall Time

Switching-Inductive Load

50

nS VCC = 600 V, IC = 15 A

200

nS VGE = 15 V, Rg = 3.3 ,

200

nS Tj = 125°C

300

nS

Td(off)

tf

Eoff

Turn-Off Delay Time

Fall Time

Turn-Off Losses

200

nS VCEclamp = 600 V, IC = 15 A

200

nS VGE = 15 V, Rg = 3.3

1.5

mWs L = 1 mH, Tj = 125°C

PRELIMINARY DATA: OM6520SC

IGBT CHARACTERISTICS

Parameter - OFF (see Note 1)

Min. Typ. Max. Units Test Conditions

V(BR)CES Collector Emitter

Breakdown Voltage

ICES Zero Gate Voltage

Drain Current

IGES Gate Emitter Leakage

Current

Parameter - ON

1000

V

0.25 mA

1.0 mA

±100 nA

VCE = 0

IC = 250 µA

VCE = Max. Rat., VGE = 0

VCE = 0.8 Max. Rat., VGE = 0

TC = 125°C

VGE = ±20 V

VCE = 0 V

VGE(th)

VCE(sat)

Gate Threshold Voltage

Collector Emitter

Saturation Voltage

VCE(sat) Collector Emitter

Saturation Voltage

Dynamic

4.5

6.5 V VCE = VGE, IC = 1 mA

3.0

V VGE = 15 V, IC = 15 A

TC = 25°C

4.0 4.5 V VGE = 15 V, IC = 15 A

TC = 125°C

gfs

Forward Transductance

Cies Input Capacitance

Coes Output Capacitance

Cres Reverse Transfer Capacitance

Switching-Resistive Load

5.5

2000

160

65

S VCE = 20 V, IC = 15 A

pF VGE = 0

pF VCE = 25 V

pF f = 1 mHz

Td(on) Turn-On Time

tr

Rise Time

Td(off) Turn-Off Delay Time

tf

Fall Time

Switching-Inductive Load

50

nS VCC = 600 V, IC = 15 A

200

nS VGE = 15 V, Rg = 3.3 ,

200

nS Tj = 125°C

300

nS

Td(off) Turn-Off Delay Time

tf

Fall Time

Eoff Turn-Off Losses

DIODE CHARACTERISTICS

200

nS VCEclamp = 600 V, IC = 15 A

200

nS VGE = 15 V, Rg = 3.3

1.5

mWs L = 1 mH, Tj = 125°C

Vf

Maximum Forward Voltage

Ir

Maximum Reverse Current

trr

Reverse Recovery Time

1.85 V IF = 30 A, TC = 25°C

1.70 V IF = 30 A, TC = 150°C

500 µA VR = 1000 V, TC = 25°C

7.0 mA VR = 800 V, TC = 125°C

50 nS IF = 1 A, di / dt = -15 A µ/S

VR = 30 V, Tj = 25°C

Note 1: Limited by diode Ir characteristic.

Share Link: