2N5401 查看數據表（PDF） - TY Semiconductor

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产品描述 (功能)

生产厂家

2N5401

PNP General Purpose Amplifier

TY Semiconductor 

SDDSMIMIPPDDTTTyTypyyppepeee

■ Features

● Switching and amplification in high voltage

● Applications such as telephony

● Low current(max. 600mA)

● High voltage(max.150V)

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Product specification

2N5401

TO-92

123

1. Emitter

2. Base

3. Collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current-continuous

Collector Power Dissipation

Junction and storage temperature

Symbol

Rating

Unit

VCBO

-160

V

VCEO

-150

V

VEBO

-5

V

IC

-600

mA

Pc

625

mW

TJ, Tstg

-55 to +150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transiston frequency

Symbol

Test conditions

V(BR)CBO IC = -100 μA, IE = 0

V(BR)CEO IC =- 1.0 mA, IB = 0

V(BR)EBO IE = -10 μA, IC = 0

ICBO VCB =- 120 V, IE = 0

IEBO VEB = -3.0 V, IC = 0

IC = -1.0 mA, VCE = -5 V

hFE IC = -10 mA, VCE = -5 V

IC = -50 mA, VCE = -5 V

VCE(sat) IC = -50 mA, IB = -5.0 mA

VBE(sat) IC = -50 mA, IB = -5.0 mA

fT VCE=-5V,IC=-10mA,f=30MHz

Min Typ Max Unit

-160

V

-150

V

-5

V

-50 nA

-50 nA

50

60

240

50

-0.5 V

-1.0 V

100

300 MHz

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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