2N6738 查看數據表（PDF） - Inchange Semiconductor
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2N6738 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N6738 2N6739 2N6740
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6738
2N6739 IC=0.2A ;IB=0
2N6740
VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=1A
VCEsat-2 Collector-emitter saturation voltage IC=8A;IB=4A
VBEsat Base-emitter saturation voltage
ICEV
Collector cut-off current
IEBO
Emitter cut-off current
IC=5A;IB=1A
VCEV=Rated VCEV;VBE=-1.5V
TC=100℃
VEB=8V; IC=0
hFE
DC current gain
IC=5A ; VCE=3V
fT
Transition frequency
IC=0.2A ; VCE=10V
Switching times
td
Delay time
tr
Rise time
ts
Storage time
IC=5A;IB1=-IB2=1A
VCC=125V
tp=20μs,Duty cycle≤1.0%
tf
Fall time
MIN TYP. MAX UNIT
300
350
V
400
1.0
V
2.0
V
1.6
V
0.1
1.0
mA
2.0 mA
10
40
10
60 MHz
0.1 μs
0.4 μs
2.5 μs
0.5 μs
2
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