2N1613JANTXV 查看數據表（PDF） - Microsemi Corporation

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产品描述 (功能)

生产厂家

2N1613JANTXV

NPN LOW POWER SILICON TRANSISTOR

Microsemi Corporation 

2N718A, 2N1613, 2N1613L JAN, SERIES

ELECTRICAL CHARACTERISTICS (con’t)

Characteristics

ON CHARACTERISTICS (3)

Forward-Current Transfer Ratio

IC = 0.1 mAdc, VCE = 10 Vdc

IC = 10 mAdc, VCE = 10 Vdc

IC = 150 mAdc, VCE = 10 Vdc

IC = 500 mAdc, VCE = 10 Vdc

Collector-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

Base-Emitter Saturation Voltage

IC = 150 mAdc, IB = 15 mAdc

DYNAMIC CHARACTERISTICS

Magnitude of Small-Signal Forward Current Transfer Ratio

IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz

Small-Signal Forward Current Transfer Ratio

IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz

IC = 5.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz

Small-Signal Short Circuit Input Impedance

IC = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz

Small-Signal Short Circuit Output Admittance

IC = 5.0 mAdc, VCB = 10 Vdc, f = 1.0 kHz

Output Capacitance

VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz

SWITCHING CHARACTERISTICS

Turn-On Time + Turn-Off Time

(See Figure 1 of MIL-PRF-19500/181)

(3)Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

Symbol

hFE

VCE(sat)

VBE(sat)

hfe

hfe

hib

hob

Cobo

ton + toff

Min. Max. Unit

20

35

40

120

20

Vdc

1.5

Vdc

1.3

3.0

30

100

35

150

4.0

8.0

Ω

1.0

ηΩ

pF

25

30

ηs

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803

120101

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