2SA1020RLRAG(2010) 查看數據表（PDF） - ON Semiconductor
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2SA1020RLRAG Datasheet PDF : 4 Pages
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2SA1020
One Watt High Current
PNP Transistor
Features
• This is a Pb−Free Device*
MAXIMUM RATINGS
Rating
Symbol Value Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VCE
50
Vdc
VCB
50
Vdc
VEB
5.0
Vdc
IC
2.0
Adc
PD
900
mW
5.0 mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
W
12 mW/°C
Operating and Storage Junction Temperature TJ, Tstg −55 to
°C
Range
+150
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
RqJA
125 °C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
VOLTAGE AND CURRENT
ARE NEGATIVE FOR
PNP TRANSISTORS
COLLECTOR
2
3
BASE
PNP
1
EMITTER
123
STRAIGHT LEAD
BULK PACK
TO−92 (TO−226)
1
2
3
CASE 29−10
STYLE 14
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2SA
1020
AYWW G
G
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
1
August, 2010 − Rev. 4
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Publication Order Number:
2SA1020/D
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