2SA1585S 查看數據表（PDF） - Transys Electronics Limited

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2SA1585S

TO-92S Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-92S Plastic-Encapsulated Transistors

2SA1585S TRANSISTOR (PNP)

FEATURES

Power dissipation

PD : 0.4W (Tamb=25℃)

Collector current

I CM : -2A

Collector-base voltage

V(BR)CBO : -20V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92S

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

V(BR)CBO

Ic= -50µA , IE=0

-20

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1 mA , IB=0

-20

Emitter-base breakdown voltage

V(BR)EBO

IE=- 50µA, IC=0

-6

Collector cut-off current

ICBO

VCB=-20V , IE=0

Emitter cut-off current

IEBO

VEB= -5V , IC=0

DC current gain

hFE

VCE=-2 V, IC= -0.1A

120

Collector-emitter saturation voltage

Transition frequency

VCEsat

fT

IC= -2A, IB=-0.1A

VCE=-2V, IC=-0.5A

200

F=100MHz

MAX

-0.1

-0.1

390

-0.5

UNIT

V

V

V

µA

µA

V

MHz

CLASSIFICATION OF hFE

Rank

Range

Q

120-170

R

180-390

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