2SA1607 查看數據表（PDF） - TY Semiconductor

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产品描述 (功能)

生产厂家

2SA1607

PNP Epitaxial Planar Silicon Transistors

TY Semiconductor 

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Gain bandwidth product

Output capacitance

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Delay time

Rise time

Storage time

Fall time

Symbol

Testconditons

ICBO VCB = -30V, IE=0

IEBO VEB = -4V, IC=0

hFE VCE = -1V , IC = -10mA

fT VCE = -10V , IC = -10mA

Cob VCB = -10V , f = 1.0MHz

VCE(sat) IC = -10mA , IB = -1mA

VBE(sat) IC = -10mA , IB = -1mA

V(BR)CBO IC = -10ìA , IE = 0

V(BR)CEO IC = -1mA , RBE =

V(BR)EBO IE = -10ìA , IC = 0

td

tr

tstg

tf

hFE Classification

Marking

YL

Rank

hFE

3

60 120

4

90 180

Product specification

2SA1607

Min Typ Max Unit

-0.1 ìA

-0.1 ìA

60

180

400

MHz

2.9

pF

-0.07 -0.2 V

-0.75 -1 V

-40

V

-20

V

-5

V

14 20 ns

11 20 ns

80 180 ns

16 25 ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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