2SA1611-M5 查看數據表（PDF） - Shenzhen Jin Yu Semiconductor Co., Ltd.

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2SA1611-M5

TRANSISTOR(PNP)

Shenzhen Jin Yu Semiconductor Co., Ltd.  

TRANSISTOR(PNP)

2SA1 61 1

FEATURES

 High DC Current Gain

 High Voltage

 Complementary to 2SC4177

SOT–323

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

Value

VCBO Collector-Base Voltage

-60

VCEO Collector-Emitter Voltage

-50

VEBO Emitter-Base Voltage

-5

IC

Collector Current

-100

PC

Collector Power Dissipation

150

RΘJA Thermal Resistance From Junction To Ambient

833

Tj

Junction Temperature

Tstg

Storage Temperature

150

-55～+150

Unit

V

V

V

mA

mW

℃/W

℃

℃

1. BASE

2. EMITTER

3. COLLECTOR

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Collector-emitter voltage

Transition frequency

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE*

VCE(sat)

VBE

fT

Test conditions

IC=-100µA, IE=0

IC=-1mA, IB=0

IE=-100µA, IC=0

VCB=-60V, IE=0

VEB=-5V, IC=0

VCE=-6V, IC=-1mA

IC=-100mA, IB=-10mA

VCE=-6V, IC=-1mA

VCE=-6V,Ic=-10mA

Collector output capacitance

Cob

*Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%.

CLASSIFICATION OF hFE

RANK

RANGE

MARKING

VCB=-10V, IE=0, f=1MHz

M4

90–180

M4

M5

135–270

M5

Min

Typ

Max

-60

-50

-5

-100

-100

90

600

-0.3

-0.58

-0.68

180

4.5

M6

200–400

M6

M7

300–600

M7

Unit

V

V

V

nA

nA

V

V

MHz

pF

１　

JinYu

semiconductor

www.htsemi.com

Ｄａｔｅ：２０１１／０５

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