A1774G(2012) 查看數據表（PDF） - ON Semiconductor
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A1774G Datasheet PDF : 5 Pages
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2SA1774G, S2SA1774G
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Collector−Base Breakdown Voltage
(IC = −50 mAdc, IE = 0)
Collector−Emitter Breakdown Voltage
(IC = −1.0 mAdc, IB = 0)
Emitter−Base Breakdown Voltage
(IE = −50 mAdc, IE = 0)
Collector−Base Cutoff Current
(VCB = −30 Vdc, IE = 0)
Emitter−Base Cutoff Current
(VEB = −5.0 Vdc, IB = 0)
Collector−Emitter Saturation Voltage (Note 2)
(IC = −50 mAdc, IB = −5.0 mAdc)
DC Current Gain (Note 2)
(VCE = −6.0 Vdc, IC = −1.0 mAdc)
Transition Frequency
(VCE = −12 Vdc, IC = −2.0 mAdc, f = 30 MHz)
Output Capacitance
(VCB = −12 Vdc, IE = 0 Adc, f = 1 MHz)
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
Symbol
Min
Typ
Max
Unit
V(BR)CBO
−60
−
Vdc
−
V(BR)CEO
−50
−
Vdc
−
V(BR)EBO
−6.0
−
Vdc
−
ICBO
−
nA
−
−0.5
IEBO
−
mA
−
−0.5
VCE(sat)
−
Vdc
−
−0.5
hFE
−
120
−
560
fT
MHz
−
140
−
COB
pF
−
3.5
−
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