UTC2SA1943(Old_V) 查看數據表（PDF） - Unisonic Technologies

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UTC2SA1943
(Rev.:Old_V)

PNP EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

UTC 2SA1943

PNP EPITAXIAL SILICON TRANSISTOR

TYPICAL CHARACTERISTICS

IC - VCE

-20

COMMON EMITTER

TC =25℃

-16

-800

-600

-400

-12

-250

-200

-150

-8

-100

IB = -10mA

-50

-4

-40

-30

-20

0

0

-2

-4

-6

-8

-10

COLLECTOR-EMITTER VOLTAGE, V CE (V)

-20

COMMON EMITTER

VCE = -5V

-16

IC - VBE

-12

-8

-4

TC =100℃

25

-25

0

0

-0.4

-0.8

-1.2

-1.6

-2.0

BASE-EMITTER VOLTAGE, VBE (V)

-3

-1

-0.3

-0.1

-0.01

VCE(sat) - IC

TC =100℃

-25

25

COMMON EMITTER

IC / IB = 10

-0.1

-1

-10

-100

COLLECTOR CURRENT, IC (A)

300

TC =100℃

100

hFE - IC

30 25

-25

10

COMMON EMITTER

VCE = -5V

0

-0.01

-0.1

-1

-10

-100

COLLECTOR CURRENT, IC (A)

SAFE OPERATING AREA

-50

IC MAX. (PULSED)※

-30

IC MAX.

1ms※

(CONTINUOUS)

-10

10ms※

100ms※

-5

-3

DC OPERATION

TC =100℃

-1

-0.5

-0.3

※ SINGLE NONREPETITIVE

PULSE TC = 25℃

-0.1 CURVES MUST BE

DERATED LINEARLY

-0.05 WITH INCREASE IN

TEMPERATURE.

-0.03

-3

-10 -30

-100

VCEO MAX.

-300

-1000

COLLECTOR-EMITTER VOLTAGE, VCE (V)

UTC UNISONIC TECHNOLOGIES CO. LTD

www.unisonic.com.tw

2

QW-R214-006,A

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