2SA2016L 查看數據表（PDF） - Unisonic Technologies

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2SA2016L

PNP EPITAXIAL PLANAR TRANSISTOR

Unisonic Technologies 

2SA2016

PNP PLANAR TRANSISTOR

ABSOLUTE MAXIMUM RATINGS (Ta=25°С)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

V

Collector-Emitter Voltage

VCEO

-50

V

Emitter-Base Voltage

VEBO

-6

V

Collector Dissipation Mounted on a ceramic board

(250mm2*0.8mm)

Pc

1.3

W

Collector Dissipation (Tc=25°C)

Pc

3.5

W

Collector Current

Ic

-7

A

Collector Current

Icp

-10

A

Base Current

Junction Temperature

Storage Temperature

IB

-1.2

A

TJ

150

°C

TSTG

-55 to +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Tc=25℃)

PARAMETER

Collector-to-Base Breakdown Voltage

Collector-to- Emitter Breakdown Voltage

Emitter-to-Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Gain Bandwidth Product

Output Capacitance

Turn-on Time

Storage Time

Fall Time

SYMBOL

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

VCE(SAT)

VBE(SAT)

fT

Cob

tON

tSTG

tF

TEST CONDITIONS

Ic= -10µA, IE=0

Ic= -1mA, RBE=∞

Ic=0, IE= -10µA

VCB= -40V, IE=0

VEB= -4V, Ic=0

VCE= -2V, Ic= -500mA

Ic= -3.5A, IB= -175mA

Ic= -2A, IB= -40mA

Ic= -2A, IB= -40mA

VCE= -10V, Ic= -500mA

VCB= -10V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

MIN TYP MAX UNIT

-50

V

-50

V

-6

V

-0.1 µA

-0.1 µA

200

560

-0.23 -0.39 V

-0.24 -0.40 V

-0.83 -1.2 V

290

MHz

50

pF

40

ns

225

ns

25

ns

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 6

QW-R208-018.B

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