2SB1308 查看數據表（PDF） - Willas Electronic Corp.

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2SB1308

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS

SOT-89 Plastic-Encapsulate Transistors

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

SOD-123+ PACKAGE

FM120-M+

2SB1308 THRU

FM1200-M+

Pb Free Product

TRANSFISeTaOtRur(PeNsP)

• Batch process design, excellent power dissipation offers

FEATURbEetSter reverse leakage current and thermal resistance.

z Po•wLoeoprwtimTpirrzoaefniblseoissaurtodrfraspceacmeo. unted application in order to

z Ex•cLeollwenpot wDeCr locsusr,rheinght Geffaiciniency.

z Lo•wHCigoh lcleucrrteonrt-ceampaitbteilirtyS, laotwufroartwioanrdVvoollttaaggeedrop.

• High surge capability.

z Pb•-GFuraeredripngafcokr oavgeervoilstaagevparioltaebctlioen.

Ro••HSUSilltircapohnriogehdp-iutsapcxetiaefldopsrlawpnitaacrhcciknhiginp.,gmceotadl seiliscounffjiuxnc”tGio”n.

Ha•loLegaedn-frefreepearptsromdeeutcetnvfoirronpmaecnktainl sgtacndoadredssouf ffix “H”

MIL-STD-19500 /228

• RoHS product for packing code suffix "G"

Halogen free product for packing code suffix "H"

Package outline

SOT-89

SOD-123H

1. BASE

0.146(3.7)

0.130(3.3)

2. COLLECTOR

3. EMITTER

0.012(0.3) Typ.

0.071(1.8)

0.056(1.4)

Mechanical data

MAXIM•UEMpoxRyA: UTLIN94G-VS0 (rTatae=d2f5la℃meurentlaerdsasntotherwise noted)

0.040(1.0)

0.024(0.6)

• Case : Molded plastic, SOD-123H

Symbol

Parameter

,

• Terminals :Plated terminals, solderable per MIL-STD-750

VCBO

ColleMcetothr-oBda2s0e2V6oltage

VCE•OPolaritCy o: Illnedcitcoar-teEdmbitytecraVthooltdaegbeand

Value Unit 0.031(0.8) Typ.

0.031(0.8) Typ.

-30

V

-20

DVimensions in inches and (millimeters)

VEB•OMountiEnmg Pittoesri-tBioanse: AVnoyltage

-6

V

IC• WeightC:oAllpepcrtooxriCmuartreedn0t .011 gram

-3

A

PC

CMoAllXecIMtorUPMowReAr TDIiNssGipSatiAonND ELECTRICAL CHARAC50T0ERISTICSmW

RatiRngθsJAat 25℃ Tahmebrmienatl tRemespiesrtaatnurceeuFnrleosms oJtuhnecrwtiiosne TspoeAcimfiebdi.ent

250

℃/W

SingleTpj hase haJlfuwnacvtieo,n60THezm, preesriastiuvreeof inductive load.

150

℃

For cTasptgacitive loSatdo,rdaegreatTeecmurpreenrtabtuyr2e0%

-55~+150

℃

RATINGS

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

Marking Code

12

13

14

15

16

Maximum Recurrent Peak Reverse Voltage

VRRM

20

30

40

50

60

EMLaxEimCuTmRRMICSAVLoltaCgeHARACTERISTICS (Ta=V2R5M℃S unl1e4ss oth21erwise28speci3f5ied) 42

18

10

115 120

80

100

150

200 V

56

70

105

140 V

Maximum DC Blocking Voltage

Maximum AverPagaeraFmorwetaerdr Rectified Current

VDC

SyImO bol

Collector-base breakdown voltage

V(BR)CBO

Peak Forward Surge Current 8.3 ms single half sine-wave

suCpoerlilmepcotsoerd-eonmraittetedrlobadre(JaEkDdEoCwmnethvoodl)tage

V(IBFSRM)CEO

TEypmiciatltTehr-ebrmaasleRbesriestaakndceo(wNontev2o)ltage

VR(BΘRJ)AEBO

TCypoiclalel cJutoncrticonutC-aopfaf ccituanrrceen(Nt ote 1)

OEpmeraittitnegr Tceumtp-oerfaftucruerRreanngte

Storage Temperature Range

DC current gain

ICCJBO

ITEJBO

TSTG

hFE

20

30

40

Test conditions

IC=-50µA,IE=0

IC=-1mA,IB=0

IE=-50µA,IC=0

VCB=-20V,IE=0

-55 to +125

VEB=-5V,IC=0

VCE=-2V, IC=-0.5A

50

60

80

100

150

Min 1.0Typ

Max

Unit

-30

V

-20 30

V

-6 40

120

- 65 to +175

82

V

-0.5

µA

--505.5to +150 µA

390

200 V

A

A

℃

Collector-emittCerHAsRaAtuCrTaEtRioISnTvICoSltage

MCaxoimlleucmtoForrowuartdpVuotltcaagepaatc1it.0aAncDeC

Maximum Average Reverse Current at @T A=25℃

RTarteadnDsCitiBolnocfkrinegqVuoeltnacgey

@T A=125℃

NOTES:

SVYCMEB(sOatL) FM12I0C-M=H-1F.M51A3,0I-BM=H-0F.M1154A0-MH FM150-MH FM160-MH FM180-MH-0F.M415100-MH FVM1150-MH FM1200-MH U

VCFob

VCB=-20V,IE0=.500, f=1MHz 0.70

60 0.85

pF 0.9

0.92 V

IR

VCE=-6V,IC=-50mA,

fT

0.5

10 120

MHz

m

f=30MHz

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

C2- LThAerSmSal IRFeIsCistAanTceIOFroNm OJunFctihonFEto Ambient

RANK

P

Q

R

RANGE

82–180

120–270

180–390

MARKING

BFP

BFQ

BFR

2012-06

2012-0

WILLAS ELECTRONIC CORP

WILLAS ELECTRONIC CORP.

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