2SB1308 查看數據表（PDF） - Willas Electronic Corp.

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2SB1308

SOT-89 Plastic-Encapsulate Transistors

Willas Electronic Corp. 

WILLAS FM120-M+

SOT-89 Plastic-Encapsulate Transistors

1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V

2SB1308 THRU

FM1200-M+

Typical ChaSrOaDc-1t2e3r+isPtiAcCsKAGE

Pb Free Product

Static Characteristic

Fe -600 atures

-1.5mA

COMMON

• Batch process design, excellent power disEMsIiTpTaERtion offers

-5b00etter reverse leakage cu-1r.3r5emnAt and thermTaa=l2r5e℃sistance.

• Low profile surface mounte-1d.2maApplication in order to

-4o00ptimize board space.

-1.05mA

• Low power loss, high efficiency-0..9mA

•

High

-300

current

capability,

low

forwa-0r.7d5mvAoltage

drop.

• High surge capability.

-0.6mA

• Guardring for overvoltage protection.

-200

-0.45mA

• Ultra high-speed switching.

• Silicon epitaxial planar chip, metal silic-0o.3nmAjunction.

-100

• Lead-free parts meet environmental stanI d=-a0.r1d5msAof

B

MIL-STD-19500 /228

• R-0o-0HS produc-1t for pack-i2ng code s-3uffix "G" -4

-5

Halogen freeCOpLrLoEdCTuOcRt -fEoMrITpTaEcRkVinOLgTAcGoEdeVsCuE ff(iVx) "H"

1000 Package ohFE u—tl—ineIC

COMMON EMITTER

V =-2V

CE

T =100℃

a

SOD-123H

0.146(3.7)

T =25℃

a

0.130(3.3)

0.012(0.3) Typ.

300

0.071(1.8)

0.056(1.4)

100

-1

-10

-100

-1000

COLLECTOR CURRENT I (mA)

C

-3000

Mechanical data

VCEsat —— IC

•-1E00p0 oxy : UL94-V0 rated flame retardant

-1200

VBEsat —— IC

0.040(1.0)

0.024(0.6)

• Case : Molded plastic, SOD-123H

, -1000

• Terminals :Plated terminals, solderable per MIL-STD-750

0.031(0.8) Typ.

0.031(0.8) Typ.

-100

Method 2026

• Polarity : Indicated by cathode band

T =100 ℃

a

• Mounting Position : Any

T =25℃

a

• Weight : Approximated 0.011 gram

-10

-800

DimTe=n2s5i℃ons in inches and (millimeters)

a

-600

T =100 ℃

a

MAXIMUM RATINGS AND ELECTRICAL CHAR-40A0 CTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

β=10

Single pha-s1 e half wave, 60Hz, resistive of inductive load.

-200

-1

-10

-100

-1000

-3000

-1

For capacitive load, deratCeOcLuLErrCeTnOtRbCyUR2R0E%NT I (mA)

C

β=10

-10

-100

-1000

COLLECTOR CURRENT I (mA)

C

-3000

Marking C-3o00d0e

RATINGS

IC —— VBE

Maximum Recurrent Peak Reverse Voltage

-1000

Maximum RMS Voltage

Maximum DC Blocking Voltage

SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH

12

13200

14

15

fT

——

16

IC

18

10

115 120

VRRM

20

30

40

50

60

80

100

150

200

VRMS

14

21

28

35

42

100

VDC

20

30

40

50

60

56

70

105

140

80

100

150

200

Maximum Average Forward Rectified Current

IO

1.0

-100

Peak Forward Surge Current 8.3 ms single half sine-wave IFSM

30

superimposed on rated load (JEDEC method)

30

Typical The-1r0mal Resistance (Note 2)

RΘJA

40

Typical Junction Capacitance (Note 1)

Operating Temperature Range

Storage Tem-1 perature Range

-0

-300

-600

CJ

COMMON ETMJITTER

V =-2V

CE

TSTG

-900

-1200

-55 to +125

10

-7

-10

120

COMMON EMITTER

V=

CE

-6-V55

to

+150

- 65 to +175Ta=25℃

-100

BASE-EMMITER VOLTAGE

CHARACTERISTICS

V

BE

(mV)

SYMBOL

COLLECTOR CURRENT I (mA)

FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FMC 180-MH FM1100-MH

FM1150-MH FM1200-MH

Maximum Forward Voltage at 1C.o0b/ACiDb C—— VCB/VEB

Maximum A50v0erage Reverse Current at @T A=25℃

Rated DC Blocking Voltage

@T A=125℃

VF

fI=R1MHz

I =0/I =0

E

C

T =25 ℃

a

NOTES:

C

ib

1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.

0.50

600

500

400

0P.C70 —— Ta

0.5

10

0.85

0.9

0.92

2- Thermal R10e0sistance From Junction to Ambient

300

C

ob

200

100

10

2012-0-0.61

2012-0

-1

REVERSE VOLTAGE V (V)

-10

-20

0

0

25

50

75

100

125

150

AMBIENT WILLAS TEMPERATURE T (℃) ELECTRONIC CORP

a

WILLAS ELECTRONIC CORP.

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