2SB1530 查看數據表（PDF） - SavantIC Semiconductor

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2SB1530

Silicon PNP Power Transistors

SavantIC Semiconductor  

SavantIC Semiconductor

Silicon PNP Power Transistors

Product Specification

2SB1530

CHARACTERISTICS

Tj=25 unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA , RBE=<

V(BR)EBO Emitter-base breakdown voltage

IE=-5mA , IC=0

VCEsat Collector-emitter saturation voltage IC=-500mA ;IB=-50mA

VBE

Base-emitter on voltage

IC=-50mA ; VCE=-4V

ICBO

Collector cut-off current

VCB=-120V ;IE=0

hFE-1

DC current gain

IC=-50mA ; VCE=-4V

hFE-2

DC current gain

IC=-500mA ; VCE=-10V

MIN TYP. MAX UNIT

-150

V

-6

V

-3.0 V

-1.0 V

-1

µA

60

200

60

hFE-1 Classifications

B

C

60-120

100-200

2

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