2SB740 查看數據表（PDF） - Transys Electronics Limited

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2SB740

TO-92MOD Plastic-Encapsulated PNP Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-92MOD Plastic-Encapsulated Transistors

2SB740 TRANSISTOR (PNP)

FEATURE

Power dissipation

PCM:

0.9

W (Tamb=25℃)

Collector current

ICM:

-1

A

Collector-base voltage

V(BR)CBO:

-70

V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92MOD

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

Collector-base breakdown voltage

V(BR)CBO

Ic= -10µA , IE=0

-70

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA , IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO

IE= -10µA, IC=0

-6

Collector cut-off current

ICBO

VCB= -55 V, IE=0

Emitter cut-off current

IEBO

VEB= -6 V, IC=0

DC current gain

hFE

VCE=-2 V, IC= -100mA

100

Collector-emitter saturation voltage

VCEsat

IC= -1A, IB=-100mA

MAX

-1

-0.2

320

-0.6

Transition frequency

fT

VCE=-2V, IC= -10mA

100

Output capacitance

Cob

VCE=-10V, IE=0, f=1 MHz

45

CLASSIFICATION OF hFE

Rank

Range

B

100-200

C

160-320

UNIT

V

V

V

µA

µA

V

MHz

pF

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