2SC2625 查看數據表（PDF） - Unisonic Technologies
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2SC2625 Datasheet PDF : 3 Pages
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2SC2625
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TC=25℃)
PARAMETER
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL
VCBO
VCEO
VCEO(SUS)
VEBO
IC
IB
PD
TJ
TSTG
RATINGS
450
400
400
7
10
3
80
+150
-40 ~ +150
UNIT
V
V
V
V
A
A
W
℃
℃
ELECTRICAL SPECIFICATIONS (TC =25℃, Unless Otherwise Specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Collector Base Voltage
VCBO ICBO=1mA
450
Collector Emitter Voltage
VCEO ICEO=10mA
400
VCEO (SUS) IC=1A
400
Emitter Base Voltage
VEBO IEBO=0.1mA
7
Collector-Emitter Saturation Voltage
Base Emitter Saturation Voltage
VCE (Sat)
VBE (Sat)
IC=4A, IB=0.8A
Collector Cut-off Current
ICBO VCBO=450V
Emitter Cut-off Current
IEBO
VEBO=7V
DC Current Gain
hFE IC=4A, VCE=5V
10
Switching Time
tON
tSTG
tF
IC=7.5A, IB1=-IB2=1.5A
RL=20Ω, Pw=20µs, Duty ≤ 2%
TYP
MAX
1.2
1.5
1.0
0.1
UNIT
V
V
V
V
V
V
mA
mA
1.0 µs
2.0 µs
1.0 µs
THERMAL CHARACTERISTICS
PARAMETER
Thermal Resistance Junction to Case
SYMBOL
θJC
RATINGS
1.55
UNIT
℃/W
SWITCHING TIME TEST CIRCUIT
RL=20Ω
IB 1
IB 1
IC
IB2
IB 2
PW=20μs
0.9IC
IC
0.1IC
ton
t stg
tf
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R214-009,B
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