2SC4051 查看數據表（PDF） - Inchange Semiconductor
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2SC4051 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
2SC4051
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1.5A; IB= 0.3A
ICBO
Collector Cutoff Current
At rated Voltage
ICEO
Collector Cutoff Current
At rated Voltage
IEBO
Emitter Cutoff Current
At rated Voltage
hFE-1
DC Current Gain
IC= 1.5A ; VCE= 5V
hFE-2
DC Current Gain
IC= 1mA ; VCE= 5V
fT
Current-Gain—Bandwidth Product IC= 0.3A ; VCE= 10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 1.5A , IB1=0.3A; IB2= -0.6A
RL= 100Ω; VBB2= 4V
MIN TYP. MAX UNIT
450
V
1.0
V
1.5
V
100 μA
100 μA
100 μA
10
5
20
MHz
0.5 μs
2.0 μs
0.2 μs
isc Website：www.iscsemi.cn
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