2SC4617-AE3-R 查看數據表（PDF） - Unisonic Technologies
零件编号
产品描述 (功能)
生产厂家
2SC4617-AE3-R Datasheet PDF : 4 Pages
| |||
2SC4617
■ TYPICAL CHARACTERICS
NPN EPITAXIAL SILICON TRANSISTOR
Grounded emitter propagation characteristics
50
20
10
5
2 Ta=100℃
1
0.5
25℃
VCE = 6V
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE, VBE (V)
Grounded emitter output characteristics(¢º)
10 Ta = 25℃
30μA
27 μA
8
24 μA
21 μA
6
18 μA
15 μA
4
12 μA
9μ A
6μA
3μA
20
IB =
0
4
8 0A12
16
20
COLLECTOR TO EMITTER VOLTAGE, VCE (V)
DC current gain vs. collector current (Ⅱ)
500
Ta = 100℃ VCC = 5V
200
25℃
100
50
20
10
0.2 0.5 1 2 5 10 20 60 100 200
COLLECTOR CURRENT, IC (mA)
Grounded emitter output characteristics(Ι)
100
Ta = 25℃
80
60
40
20
0.50mA
00..4450mmAA
0.3 5m A
0.30mA
0.25mA
0.20mA
0.15mA
0.10mA
0. 05 mA
0
IB = 0A
0
0.4 0.8 1.2 1.6 2.0
COLLECTOR TO EMITTER VOLTAGE, VCE (V)
DC current gain vs. collector current (Ι)
500 Ta = 25℃
200
VCC = 5V
3V
100
1V
50
20
10
0.2 0.5 1 2 5 10 20 60 100 200
COLLECTOR CURRENT, IC (mA)
Collector-emitter saturation voltage vs.
collector current
0.5
Ta = 25℃
0.2
0.1
0.05
IC/IB = 5V
20
10
0.02
0.01
0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT, IC (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3
QW-R206-081,A
Share Link: 