2SC4617
TYPICAL CHARACTERISTICS
Grounded Emitter Propagation
Characteristics
50
VCE = 6V
20
10
5 25℃
2
1 Ta=100℃
0.5
-55℃
0.2
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Base to Emitter Voltage, VBE (V)
NPN SILICON TRANSISTOR
Grounded Emitter Output Characteristics (I)
100
Ta = 25℃
0.50mA
0.45mA
80
0.40mA
0.35mA
0.30mA
0.25mA
60
0.20mA
0.15mA
40
0.10mA
20
0.05mA
IB = 0A
0
0 0.4 0.8 1.2 1.6 2.0
Collector to Emitter Voltage, VCE (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 5
QW-R206-081.D