2SC508 查看數據表（PDF） - Inchange Semiconductor
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2SC508 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SC508
DESCRIPTION
·With TO-66 package
·High collector-base breakdown voltage
:VCBO=180V(min)
APPLICATIONS
·For power switching and TV horizontal
output applications.
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
180
60
6
4
25
150
-65~200
UNIT
V
V
V
A
W
℃
℃
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