2SC508 查看數據表（PDF） - Inchange Semiconductor

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2SC508

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC508

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA; IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4 A

VBEsat Base-emitter saturation voltage

IC=4A; IB=0.4 A

ICBO

Collector cut-off current

VCB=180V;IE=0

IEBO

Emitter cut-off current

VEB=6V; IC=0

hFE

DC current gain

IC=4A ; VCE=5V

MIN TYP. MAX UNIT

60

V

180

V

6

V

1.5

V

1.5

V

100 μA

100 μA

20

2

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