2SD1535 查看數據表（PDF） - Inchange Semiconductor
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2SD1535 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; RBZ=∞,L=25mH
VCEsat Collector-emitter saturation voltage IC=7A ; IB=70mA
VBEsat Base-emitter saturation voltage
IC=7A ; IB=70mA
ICBO
Collector cut-off current
VCB=500V; IE=0
ICEO
Collector cut-off current
VCE=400V; IB=0
IEBO
Emitter cut-off current
VEB=12V; IC=0
hFE-1
DC current gain
IC=2A ; VCE=2V
hFE-2
DC current gain
IC=6A ; VCE=2V
fT
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
Fall time
IC=7A ; IB1=-IB2=70mA
VCC=300V
Product Specification
2SD1535
MIN TYP. MAX UNIT
400
V
2.0
V
2.5
V
0.1
mA
0.1
mA
100 mA
500
200
20
MHz
1.5
μs
5.0
μs
6.5
μs
2
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